FYA3010DNTU【PDF 1/4 页】DIODE SCHOTTKY RECTIFIER TO-3P

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Sheet目录79

[1页]2页 3页 4页

?2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FYA3010DN Rev. A

FYA3010DN Schottky Barrier Rectifier

July 2005

FYA3010DN

Schottky Barrier Rectifier

Features

? Low forward voltage drop

? High frequency properties and switching speed

? Guard ring for over-voltage protection

Applications

? Switched mode power supply

? Freewheeling diodes

Absolute Maximum Ratings

(per diode) Ta

= 25°C unless otherwise noted

Thermal Characteristics

= 25°C unless otherwise noted

Electrical Characteristics

(per diode) Ta

= 25°C unless otherwise noted

* Pulse Test: Pulse Width=300μs, Duty Cycle=2%

Symbol Parameter Value Units

VRRM

Maximum Repetitive Reverse Voltage 100 V

Maximum DC Reverse Voltage 100 V

IF(AV)

Average Rectified Forward Current @ TC

= 135

°C30 A

IFSM

Non-repetitive Peak Surge Current (per diode)

60Hz Single Half-Sine Wave

250 A

TJ, TSTG

Operating Junction and Storage Temperature - 65 to +150

°C

Symbol Parameter Value Units

RθJC

Maximum Thermal Resistance, Junction to Case (per diode) 0.78

°C/W

RθJC

Maximum Thermal Resistance, Junction to Case (per PKG) 0.48

°C/W

RθJC

Maximum Thermal Resistance, Case to Heatsink 0.2

°C/W

Symbol Parameter Value Units

VFM *

Maximum Instantaneous Forward Voltage

= 15A

= 30A

= 25

°C

= 125

°C

= 25

°C

= 125

°C

0.85

0.67

1.05(Typ.)

0.80

IRM *

Maximum Instantaneous Reverse Current

@ rated VR

= 25

= 125

°C

1. Anode 2.Cathode 3. Anode

132

TO-3P

Marking: Y3010DN

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